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IRFF9130 - Repetitive Avalanche and dv/dt Rated Power MOSFET

General Description

HEXFET POWER MOSFET technology is the key to IR HiRel’s advanced line of power MOSFET transistors.

The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high transconductance.

Key Features

  • Repetitive avalanche ratings.
  • Dynamic dv/dt rating.
  • Hermetically sealed.
  • Simple drive requirements.
  • ESD rating: Class 1C per MIL-STD-750, Method 1020 Product Summary.
  • BVDSS: -100V.
  • ID : -6.5A.
  • RDS(on),max : 0.30.
  • QG, max: 34.8nC.
  • REF: MIL-PRF-19500/564 Potential.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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IRFF9130 (JANS2N6849) Repetitive Avalanche and dv/dt Rated Power MOSFET Thru-Hole (TO-205AF / TO-39) -100V, -6.5A, P-channel PD-90550H Features • Repetitive avalanche ratings • Dynamic dv/dt rating • Hermetically sealed • Simple drive requirements • ESD rating: Class 1C per MIL-STD-750, Method 1020 Product Summary • BVDSS: -100V • ID : -6.5A • RDS(on),max : 0.30 • QG, max: 34.8nC • REF: MIL-PRF-19500/564 Potential Applications • DC-DC converter • Motor drives Product Validation TO-205AF / TO-39 Qualified to JANS screening flow according to MIL-PRF-19500 for space applications Description HEXFET POWER MOSFET technology is the key to IR HiRel’s advanced line of power MOSFET transistors.