IRFF9130 Datasheet | International Rectifier

Features - Repetitive avalanche ratings - Dynamic dv/dt rating - Hermetically sealed - Simple drive requirements - ESD rating: Class 1C per MIL-STD-750, Method 1020 Product Summary - BVDSS: -100V - ID : -6.5A - RDS(on),max : 0.30 - QG, max: 34.8n C - REF: MIL-PRF-19500/564 Potential Applications - DC-DC converter - Motor drives Product Validation TO-205AF / TO-39 Qualified to JANS screening flow according to MIL-PRF-19500 for space applications Description HEXFET POWER MOSFET technology is the key to IR Hi Rel’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance bined with high transconductance. The HEXFET transistors also feature all of the well-established advantages of MOSFETs such as voltage control, very fast switching and temperature stability of the electrical parameters. They are well suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high energy pulse circuits. Ordering Information Table 1 Ordering options Part number JANS2N6849 JANTX2N6849 JANTXV2N6849 Package TO-205AF / TO-39 TO-205AF / TO-39 TO-205AF / TO-39 TO-205AF / TO-39 Screening Level COTS JANS JANTX JANTXV Please read the Important Notice and Warnings at the end of this document .infineon./irhirel page 1 of 12 2024-12-06 IRFF9130 (JANS2N6849) Power MOSFET Thru-Hole (TO-205AF / TO-39) Table of contents Table of contents Features Potential Applications 1 Product Validation...