DESCRIPTION
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. The TO-247 is similar but superior to the earlier TO-218 package because of its isolated mounting hole. ABSOLUTE MAXIMUM RATINGS
ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Parameter Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 srew Thermal Resistance RθJC RθCS RθJA Parameter Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient G PD - 91503D IRFP150N HEXFET® Power MOSFET D VDSS = 100V RDS(on) = 0.036WΩ ID = 42A S TO-247AC Max. 42 30 140 160 1.1 ± 20 420 22 16 5.0 -55 to + 175 300 (1.6mm from case ) 10 lbf●in (1.1N●m) Typ. ––– 0.24 ––– Max.
International Rectifier
