International Rectifier IRFR3709ZPbF
HEXFET Power MOSFET
| Part No. | IRFR3709ZPbF |
|---|---|
| Datasheet | IRFR3709ZPbF Download |
| Manufacturer |  International Rectifier |
| Description | HEXFET Power MOSFET |
| Buy | Stock & Price |
APPLICATIONS
l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l Lead-Free Benefits l l l HEXFET® Power MOSFET VDSS RDS(on) max 30V 6.5m: Qg 17nC Very Low RDS(on) at 4.5V VGS Ultra-Low Gate Impedance Fully Characterized Avalanche Voltage and Current I-Pak D-Pak IRFR3709ZPbF IRFU3709ZPbFABSOLUTE MAXIMUM RATINGS
Parameter VDS VGS ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C PD @TC = 100°C TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Max. 30 ± 20 86 61 Units V A f f 340 79 39 0.53 -55 to + 175 W/°C °C W Maximum Power Dissipation Maximum Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case) Thermal Resistance Parameter RθJC RθJA RθJA Junction-to-Case Junction-to-Ambient (PCB Mount) Junction-to-Ambient Typ.
