FEATURES
l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free l Halogen-Free DESCRIPTION
Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. G ABSOLUTE MAXIMUM RATINGS
Parameter ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited) IDM Pulsed Drain Current PD @TC = 25°C Power Dissipation Linear Derating Factor VGS Gate-to-Source Voltage dEAS (Thermally limited) Single Pulse Avalanche Energy hEAS (Tested ) Single Pulse Avalanche Energy Tested Value ÃIAR Avalanche Current gEAR Repetitive Avalanche Energy TJ Operating Junction and TSTG Storage Temperature Range Reflow Soldering Temperature, for 10 seconds Mounting Torque, 6-32 or M3 screw Thermal Resistance Parameter jRθJC ijRθJA jRθJA Junction-to-Case Junction-to-Ambient (PCB mount) Junction-to-Ambient HEXFET® is a registered trademark of International Rectifier.
International Rectifier
