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IRFR9210N Datasheet Power MOSFET

Manufacturer: IRF

Overview: PD - 9.1507A PRELIMINARY l l l l l l l IRFR/U9120N HEXFET® Power MOSFET D Ultra Low On-Resistance P-Channel Surface Mount (IRFR9120N) Straight Lead (IRFU9120N) Advanced Process Technology Fast Switching Fully Avalanche Rated VDSS = -100V RDS(on) = 0.48Ω G S ID = -6.

Datasheet Details

Part number IRFR9210N
Manufacturer IRF
File Size 117.52 KB
Description Power MOSFET
Datasheet IRFR9210N_IRF.pdf

General Description

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

This benefit, bined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The D-Pak is designed for surface mounting using vapor phase, infrared, or wave soldering techniques.

Key Features

  • R A IN -B1.52 (.060) 1.15 (.045) 3X 2X 1.14 (.045) 0.76 (.030) 2.28 (.090) 4.57 (.180) 0.89 (.035) 0.64 (.025) 0.25 (.010) M A M B 0.58 (.023) 0.46 (.018) N O TE S : 1 D IM E N S IO N IN G & TO LE R A N C IN G P E R A N S I Y 14.5M , 1982. 2 C O N TR O LLIN G D IM E N S IO N : IN C H . 3 C O N F O R M S T O JE D E C O U TLIN E TO -252A A . 4 D IM E N S IO N S S H O W N A R E B E F O R E S O LD E R D IP , S O LD E R D IP M A X. +0.16 (.006). Part Marking Information TO-252AA (D-Pak) E XA M P.

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