IRFR9210 Datasheet | Vishay

FEATURES - Dynamic d V/dt rating - Repetitive avalanche rated - Surface-mount (IRFR9210, Si HFR9210) - Straight lead (IRFU9210, Si HFU9210) - Available in tape and reel - P-channel Available - Fast switching - Material categorization: for definitions of pliance please see .vishay./doc?99912 DESCRIPTION The power MOSFETs technology is the key to Vishay’s advanced line of Power MOSFET transistors. The efficient geometry and unique processing of the Power MOSFET design achieve very low on-state resistance bined with high transconductance and extreme device ruggedness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU, Si HFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 W are possible in typical surface-mount applications. ORDERING INFORMATION Package DPAK (TO-252) Lead (Pb)-free and halogen-free Si HFR9210-GE3 IRFR9210Pb F-BE3 Lead (Pb)-free IRFR9210Pb F Note a. See device orientation DPAK (TO-252) Si HFR9210TR-GE3 IRFR9210TRPb F-BE3 IRFR9210TRPb F a DPAK (TO-252) IRFR9210TRLPb F IPAK (TO-251) Si HFU9210-GE3 IRFU9210Pb F ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-source voltage Gate-source voltage Continuous drain current Pulsed drain current a Linear derating factor Linear derating factor (PCB mount) e Single pulse avalanche energy b Repetitive avalanche current a Repetitive avalanche energy a Maximum power dissipation Maximum power dissipation (PCB mount) e Peak diode recovery d V/dt c VGS at -10 V TC = 25 °C TC = 100 °C TC = 25 °C TA = 25 °C EAS IAR EAR PD d V/dt Operating junction and storage temperature range Soldering remendations (peak temperature)...