IRFS4410 Datasheet PDF

APPLICATIONS

l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability G PD - 96902A IRFB4410 IRFS4410 IRFSL4410 HEXFET® Power MOSFET D VDSS RDS(on) typ. max. S ID 100V 8.0m: 10m: 96A G DS TO-220AB IRFB4410 G DS D2Pak IRFS4410 G DS TO-262 IRFSL4410

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter ID @ TC = 25°C ID @ TC = 100°C Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V IDM Pulsed Drain Current d PD @TC = 25°C Maximum Power Dissipation Linear Derating Factor VGS Gate-to-Source Voltage dv/dt Peak Diode Recovery f TJ Operating Junction and TSTG Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Mounting torque, 6-32 or M3 screw Avalanche Characteristics EAS (Thermally limited)...