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IRFS4410ZPbF - Power MOSFET

Download the IRFS4410ZPbF datasheet PDF. This datasheet also covers the IRFB4410ZPbF variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Pulse) Avalanche Current (A) 1 Allowed avalanche Current vs avalanche pulsewidth, tav, assuming ΔΤ j = 25°C and Tstart = 150°C. 0.1 1.0E-06 1.0E-05 1.0E-04 1.0E-03 tav (sec) Fig 14. Typical Avalanche Current vs. Pulsewidth 1.0E-02 1.0E-01 EAR , Avalanche Energy (mJ) 150 TOP Single Pulse BOTTOM 1.0% Duty Cycle ID = 58A 100 50 Notes on Repetitive Avalanche Curves , Figures 14, 15: (For further info, see AN-1005 at www. irf. com) 1. Avalanche failures assumption: Purely a thermal.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRFB4410ZPbF-InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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IRFS4410Z N-Channel MOSFET INCHANGE
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IRFS4410 N-Channel MOSFET INCHANGE
IRFS440 Power MOSFET Fairchild Semiconductor
IRFS440A N-Channel MOSFET Inchange Semiconductor

Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRFS4410Z Power MOSFET
IRFS4410PbF HEXFET Power MOSFET
IRFS4010 Power MOSFET
IRFS4010-7PPbF Power MOSFET
IRFS4010PbF Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
IRFB4410ZPbF IRFS4410ZPbF IRFSL4410ZPbF Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability l Lead-Free l RoHS Compliant, Halogen-Free HEXFET® Power MOSFET D VDSS 100V RDS(on) typ. 7.2m: :G max. 9.