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IRFU9214 Datasheet Power MOSFET

Manufacturer: IRF

Overview: PD - 9.1658A PRELIMINARY IRFR/U9214 HEXFET® Power MOSFET D l l l l l l P-Channel Surface Mount (IRFR9214) Straight Lead (IRFU9214) Advanced Process Technology Fast Switching Fully Avalanche Rated VDSS = -250V RDS(on) = 3.0Ω G S ID = -2.

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve low on-resistance per silicon area.

This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The D-Pak is designed for surface mounting using vapor phase, infrared, or wave soldering techniques.

Key Features

  • 0) M A M B NOT ES: 0.58 (.023) 0.46 (.018) 2.28 (.090) 4.57 (.180) 1 DIME NSIO NING & T OLE.

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