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IRFU9214 - Power MOSFET

Download the IRFU9214 datasheet PDF. This datasheet also covers the IRFR9214 variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve low on-resistance per silicon area.

Key Features

  • 0) M A M B NOT ES: 0.58 (.023) 0.46 (.018) 2.28 (.090) 4.57 (.180) 1 DIME NSIO NING & T OLE.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRFR9214_IRF.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number IRFU9214
Manufacturer IRF
File Size 107.14 KB
Description Power MOSFET
Datasheet download datasheet IRFU9214 Datasheet

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Other Datasheets by IRF

Part Number Description
IRFU9210 Power MOSFET
IRFU9220 Power MOSFET
IRFU9014 Power MOSFET
IRFU9014PBF Power MOSFET
IRFU9024 Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
PD - 9.1658A PRELIMINARY IRFR/U9214 HEXFET® Power MOSFET D l l l l l l P-Channel Surface Mount (IRFR9214) Straight Lead (IRFU9214) Advanced Process Technology Fast Switching Fully Avalanche Rated VDSS = -250V RDS(on) = 3.0Ω G S ID = -2.7A Description Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D-Pak is designed for surface mounting using vapor phase, infrared, or wave soldering techniques.