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IRFU9214PBF - HEXFET POWER MOSFET

Download the IRFU9214PBF datasheet PDF. This datasheet also covers the IRFR9214PBF variant, as both devices belong to the same hexfet power mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve low on-resistance per silicon area.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRFR9214PBF_InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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IRFU9210 Power MOSFET Vishay Siliconix
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Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRFU9010 P-Channel Transistor
IRFU9012 P-Channel Transistor
IRFU9020 P-Channel Transistors
IRFU9022 P-Channel Transistors
IRFU9024NCPBF Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com PD - 95375A IRFR/U9214PbF P-Channel Surface Mount (IRFR9214) l Straight Lead (IRFU9214) l Advanced Process Technology l Fast Switching l Fully Avalanche Rated l Lead-Free Description l l HEXFET® Power MOSFET VDSS = -250V RDS(on) = 3.0Ω D G S ID = -2.7A Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D-Pak is designed for surface mounting using vapor phase, infrared, or wave soldering techniques.