APPLICATIONS
G l Lead-Free DESCRIPTION
Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. ABSOLUTE MAXIMUM RATINGS
ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Parameter Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 srew Thermal Resistance RθJC RθCS RθJA Parameter Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient PD - 94868A IRFZ34VPbF HEXFET® Power MOSFET D VDSS = 60V RDS(on) = 28mΩ ID = 30A S TO-220AB Max.
International Rectifier
