FEATURES
O O O O O O Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax G HEXFET® Power MOSFET D IRFZ46Z IRFZ46ZS IRFZ46ZL VDSS = 55V DESCRIPTION
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. RDS(on) = 13.6mΩ S ID = 51A TO-220AB IRFZ46Z D2Pak IRFZ46ZS Max. 51 36 200 82 0.54 ± 20 63 97 See Fig.12a,12b,15,16 -55 to + 175 TO-262 IRFZ46ZL Units A ABSOLUTE MAXIMUM RATINGS
Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS EAS EAS (tested) IAR EAR TJ TSTG Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (See Fig.
International Rectifier
