International Rectifier IRG4BC10SDPBF
INSULATED GATE BIPOLAR TRANSISTOR
| Part No. | IRG4BC10SDPBF |
|---|---|
| Datasheet | IRG4BC10SDPBF Download |
| Manufacturer |  International Rectifier |
| Description | INSULATED GATE BIPOLAR TRANSISTOR |
| Buy | Stock & Price |
FEATURES
C Standard Speed CoPack IGBT VCES = 600V● Extremely low voltage drop 1.1Vtyp. @ 2A
● S-Series: Minimizes power dissipation at up to 3 KHz PWM frequency in inverter drives, up to 4 KHz in brushless DC drives.
● Very Tight Vce(on) distribution
● IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations
● Industry standard TO-220AB package
● Lead-Free
● Generation 4 IGBTs offer highest efficiencies available
● IGBTs optimized for specific application conditions
● HEXFRED diodes optimized for performance with IGBTs . Minimized recovery characteristics require less/no snubbing
● Lower losses than MOSFET's conduction and Diode losses Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 100°C IFM VGE PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Diode Continuous Forward Curren...
