• Part: IRG4PH40UD2
  • Description: Insulated Gate Bipolar Transistor
  • Manufacturer: IRF
  • Size: 248.85 KB
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IRF
IRG4PH40UD2
IRG4PH40UD2 is Insulated Gate Bipolar Transistor manufactured by IRF.
- 94739 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode • New IGBT design provides tighter parameter distribution and higher efficiency than previous generations • IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations • Industry standard TO-247AC package UltraFast CoPack IGBT VCES = 600V VCE(on) typ. = 1.72V @VGE = 15V, IC = 20A n-channel Benefits • Higher switching frequency capability than petitive IGBTs • Highest efficiency available • HEXFRED diodes...