• Part: IRG4PH40UD2PBF
  • Description: Insulated Gate Bipolar Transistor
  • Manufacturer: IRF
  • Size: 268.07 KB
Download IRG4PH40UD2PBF Datasheet PDF
IRF
IRG4PH40UD2PBF
IRG4PH40UD2PBF is Insulated Gate Bipolar Transistor manufactured by IRF.
- 95570 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode • New IGBT design provides tighter parameter distribution and higher efficiency than previous generations • IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations • Industry standard TO-247AC package • Lead-Free UltraFast CoPack IGBT VCES = 600V VCE(on) typ. = 1.72V @VGE = 15V, IC = 20A n-channel Benefits • Higher switching frequency capability than petitive IGBTs • Highest efficiency available •...