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IRGP20B120U-E Datasheet Insulated Gate Bipolar Transistor

Manufacturer: IRF

Overview: PD- 94117 IRGP20B120U-E INSULATED GATE BIPOLAR TRANSISTOR.

IRGP20B120U-E datasheet preview

Datasheet Details

Part number	IRGP20B120U-E
Manufacturer	IRF
File Size	106.35 KB
Description	INSULATED GATE BIPOLAR TRANSISTOR
Datasheet	IRGP20B120U-E_IRF.pdf

Key Features

UltraFast Non Punch Through (NPT) Technology.
10 µs Short Circuit capability.
Square RBSOA.
Positive VCE(on) Temperature Coefficient.
Extended lead TO-247 package UltraFast IGBT C VCES = 1200V G E VCE(on) typ. = 3.05V VGE = 15V, IC = 20A, 25°C Benefits.
Benchmark efficiency above 20KHz.
Optimized for Welding, UPS, and Induction Heating.

IRGP20B120U-EP from other manufacturers

See all manufacturers

Brand Logo	Part Number	Description	Other Manufacturers
	IRGP20B120U-EP	INSULATED GATE BIPOLAR TRANSISTOR	International Rectifier
	IRGP20B120UD-EP	insulated gate bipolar transistor	International Rectifier

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