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PD- 94117
IRGP20B120U-E
INSULATED GATE BIPOLAR TRANSISTOR
Features
• UltraFast Non Punch Through (NPT) Technology • 10 µs Short Circuit capability • Square RBSOA • Positive VCE(on) Temperature Coefficient • Extended lead TO-247 package
UltraFast IGBT
C
VCES = 1200V
G E
VCE(on) typ. = 3.05V
VGE = 15V, IC = 20A, 25°C
Benefits
• Benchmark efficiency above 20KHz • Optimized for Welding, UPS, and Induction Heating applications • Rugged with UltraFast performance • Low EMI • Significantly Less Snubber required • Excellent Current sharing in Parallel operation • Longer leads for easier mounting
n-channel
TO-247AD
Absolute Maximum Ratings
Parameter
VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM VGE EAS @ TC =25°C Collector-to-Emitter Breakdown Voltage Continuous Collector Current (Fig.
IRGP20B120U-E Datasheet
