• Part: IRGP20B120U-E
  • Description: INSULATED GATE BIPOLAR TRANSISTOR
  • Category: Transistor
  • Manufacturer: IRF
  • Size: 106.35 KB
Download IRGP20B120U-E Datasheet PDF
IRF
IRGP20B120U-E
IRGP20B120U-E is INSULATED GATE BIPOLAR TRANSISTOR manufactured by IRF.
PD- 94117 INSULATED GATE BIPOLAR TRANSISTOR Features - UltraFast Non Punch Through (NPT) Technology - 10 µs Short Circuit capability - Square RBSOA - Positive VCE(on) Temperature Coefficient - Extended lead TO-247 package UltraFast IGBT VCES = 1200V VCE(on) typ. = 3.05V VGE = 15V, IC = 20A, 25°C Benefits - Benchmark efficiency above 20KHz - Optimized for Welding, UPS, and Induction Heating applications - Rugged with UltraFast performance - Low EMI - Significantly Less Snubber required - Excellent Current sharing in Parallel operation - Longer leads for easier mounting n-channel TO-247AD...