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IRGP20B120U-EP - INSULATED GATE BIPOLAR TRANSISTOR

Key Features

  • • UltraFast Non Punch Through (NPT) Technology • 10 µs Short Circuit capability • Square RBSOA • Positive VCE(on) Temperature Coefficient • Extended lead TO-247 package • Lead-Free UltraFast IGBT C VCES = 1200V G E VCE(on) typ. = 3.05V VGE = 15V, IC = 20A, 25°C Benefits • Benchmark efficiency above 20KHz • Optimized for Welding, UPS, and Induction Heating.

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www.DataSheet4U.com PD- 95897 IRGP20B120U-EP INSULATED GATE BIPOLAR TRANSISTOR Features • UltraFast Non Punch Through (NPT) Technology • 10 µs Short Circuit capability • Square RBSOA • Positive VCE(on) Temperature Coefficient • Extended lead TO-247 package • Lead-Free UltraFast IGBT C VCES = 1200V G E VCE(on) typ. = 3.