IRGP20B120UD-E - INSULATED GATE BIPOLAR TRANSISTOR

IRF

Key Features

UltraFast Non Punch Through (NPT) Technology.
Low Diode VF (1.67V Typical @ 20A & 25°C).
10 µs Short Circuit Capability.
Square RBSOA.
UltraSoft Diode Recovery Characteristics.
Positive VCE(on) Temperature Coefficient.
Extended Lead TO-247AD Package C UltraFast CoPack IGBT VCES = 1200V VCE(on) typ. = 3.05V G VGE = 15V, IC = 20A, 25°C E N-channel Benefits.
Benchmark Efficiency Above 20KHz.
Optimized for Welding.

IRGP20B120UD-E insulated gate bipolar transistor by IRF - Datasheet Preview

Datasheet Details

Part number	IRGP20B120UD-E
Manufacturer	IRF
File Size	148.42 KB
Description	INSULATED GATE BIPOLAR TRANSISTOR
Datasheet	IRGP20B120UD-E Datasheet

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PD- 93817 IRGP20B120UD-E INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • UltraFast Non Punch Through (NPT) Technology • Low Diode VF (1.67V Typical @ 20A & 25°C) • 10 µs Short Circuit Capability • Square RBSOA • UltraSoft Diode Recovery Characteristics • Positive VCE(on) Temperature Coefficient • Extended Lead TO-247AD Package C UltraFast CoPack IGBT VCES = 1200V VCE(on) typ. = 3.