IRGP20B120UD-E Description
PD- 93817 IRGP20B120UD-E INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE.
IRGP20B120UD-E Key Features
- UltraFast Non Punch Through (NPT) Technology
- Low Diode VF (1.67V Typical @ 20A & 25°C)
- 10 µs Short Circuit Capability
- Square RBSOA
- UltraSoft Diode Recovery Characteristics
- Positive VCE(on) Temperature Coefficient
- Extended Lead TO-247AD Package
- Benchmark Efficiency Above 20KHz
- Optimized for Welding, UPS, and Induction Heating
IRGP20B120UD-E Applications
- Rugged with UltraFast Performance