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IRGP30B60KD-E Datasheet Insulated Gate Bipolar Transistor

Manufacturer: IRF

Overview: PD - 94388B IRGP30B60KD-E INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY.

Datasheet Details

Part number IRGP30B60KD-E
Manufacturer IRF
File Size 263.30 KB
Description INSULATED GATE BIPOLAR TRANSISTOR
Datasheet IRGP30B60KD-E_IRF.pdf

Key Features

  • Low VCE (on) Non Punch Through IGBT Technology.
  • Low Diode VF.
  • 10µs Short Circuit Capability.
  • Square RBSOA.
  • Ultrasoft Diode Reverse Recovery Characteristics.
  • Positive VCE (on) Temperature Coefficient.
  • TO-247AD Package Benefits.
  • Benchmark Efficiency for Motor Control. C G E n-channel.
  • Rugged Transient Performance.
  • Low EMI.
  • Excellent Current Sharing in Parallel Operation. VCES = 600V IC.

IRGP30B60KD-EP from other manufacturers

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Brand Logo Part Number Description Other Manufacturers
International Rectifier Logo IRGP30B60KD-EP INSULATED GATE BIPOLAR TRANSISTOR International Rectifier

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