IRGP30B60KD-E
IRGP30B60KD-E is INSULATED GATE BIPOLAR TRANSISTOR manufactured by IRF.
Features
- Low VCE (on) Non Punch Through IGBT Technology.
- Low Diode VF.
- 10µs Short Circuit Capability.
- Square RBSOA.
- Ultrasoft Diode Reverse Recovery Characteristics.
- Positive VCE (on) Temperature Coefficient.
- TO-247AD Package
Benefits
- Benchmark Efficiency for Motor Control.
G E n-channel
- Rugged Transient Performance.
- Low EMI.
- Excellent Current Sharing in Parallel Operation.
VCES = 600V IC = 30A, TC=100°C tsc > 10µs, TJ=150°C VCE(on) typ. = 1.95V
Absolute Maximum Ratings
Parameter
VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 25°C IF @ TC = 100°C IFM VGE PD @ TC = 25°C PD @ TC = 100°C TJ TSTG
Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Diode Continuous Forward Current Diode Continuous Forward Current Diode Maximum Forward Current Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting Torque, 6-32 or M3 Screw
Thermal Resistance
RθJC RθJC RθCS RθJA Wt
Parameter Junction-to-Case
- IGBT Junction-to-Case
- Diode Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Weight
.irf.
TO-247AD
Max. 600 60 30 120 120 60 30 120 ±20 304 122 -55 to +150
300 (0.063 in. (1.6mm) from case) 10 lbf- in (1.1N- m)
Units V
V W °C
Min.
- -
- -
- -
- -
- -
- -
-...