• Part: IRGP30B60KD-E
  • Description: INSULATED GATE BIPOLAR TRANSISTOR
  • Category: Transistor
  • Manufacturer: IRF
  • Size: 263.30 KB
Download IRGP30B60KD-E Datasheet PDF
IRF
IRGP30B60KD-E
IRGP30B60KD-E is INSULATED GATE BIPOLAR TRANSISTOR manufactured by IRF.
Features - Low VCE (on) Non Punch Through IGBT Technology. - Low Diode VF. - 10µs Short Circuit Capability. - Square RBSOA. - Ultrasoft Diode Reverse Recovery Characteristics. - Positive VCE (on) Temperature Coefficient. - TO-247AD Package Benefits - Benchmark Efficiency for Motor Control. G E n-channel - Rugged Transient Performance. - Low EMI. - Excellent Current Sharing in Parallel Operation. VCES = 600V IC = 30A, TC=100°C tsc > 10µs, TJ=150°C VCE(on) typ. = 1.95V Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 25°C IF @ TC = 100°C IFM VGE PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current  Diode Continuous Forward Current Diode Continuous Forward Current Diode Maximum Forward Current Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting Torque, 6-32 or M3 Screw Thermal Resistance RθJC RθJC RθCS RθJA Wt Parameter Junction-to-Case - IGBT Junction-to-Case - Diode Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Weight .irf. TO-247AD Max. 600 60 30 120 120 60 30 120 ±20 304 122 -55 to +150 300 (0.063 in. (1.6mm) from case) 10 lbf- in (1.1N- m) Units V V W °C Min. - - - - - - - - - - - - -...