IRGP30B60KD-EP
IRGP30B60KD-EP is INSULATED GATE BIPOLAR TRANSISTOR manufactured by International Rectifier.
Features
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- - Low VCE (on) Non Punch Through IGBT Technology. Low Diode VF. 10µs Short Circuit Capability. Square RBSOA. Ultrasoft Diode Reverse Recovery Characteristics. Positive VCE (on) Temperature Coefficient. TO-247AD Package Lead-Free
VCES = 600V IC = 30A, TC=100°C
G E tsc > 10µs, TJ=150°C n-channel
VCE(on) typ. = 1.95V
Benefits
- Benchmark Efficiency for Motor Control.
- Rugged Transient Performance.
- Low EMI.
- Excellent Current Sharing in Parallel Operation. TO-247AD
Absolute Maximum Ratings
Parameter
VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ T C = 25°C IF @ TC = 100°C IFM VGE PD @ TC = 25°C PD @ T C = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Diode Continuous Forward Current Diode Continuous Forward Current Diode Maximum Forward Current Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting Torque, 6-32 or M3 Screw
Max.
600 60 30 120 120 60 30 120 ±20 304 122 -55 to +150 300 (0.063 in. (1.6mm) from case) 10 lbf- in (1.1N- m)
Units
°C
Thermal Resistance
Parameter
RθJC RθJC RθCS RθJA Wt Junction-to-Case
- IGBT Junction-to-Case
- Diode Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Weight
Min.
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- Typ.
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- - 0.24
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