Datasheet4U.com

IRGP30B60KD-EP Datasheet Insulated Gate Bipolar Transistor

Manufacturer: International Rectifier (now Infineon)

Overview: PD - 95120A IRGP30B60KD-EP INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY.

IRGP30B60KD-EP datasheet preview

Datasheet Details

Part number	IRGP30B60KD-EP
Manufacturer	International Rectifier (now Infineon)
File Size	296.84 KB
Description	INSULATED GATE BIPOLAR TRANSISTOR
Datasheet	IRGP30B60KD-EP-InternationalRectifier.pdf

Key Features

Low VCE (on) Non Punch Through IGBT Technology. Low Diode VF. 10µs Short Circuit Capability. Square RBSOA. Ultrasoft Diode Reverse Recovery Characteristics. Positive VCE (on) Temperature Coefficient. TO-247AD Package Lead-Free C VCES = 600V IC = 30A, TC=100°C G E tsc > 10µs, TJ=150°C n-channel VCE(on) typ. = 1.95V Benefits.
Benchmark Efficiency for Motor Control.
Rugged Transient Performance.

IRGP30B60KD-E from other manufacturers

See all manufacturers

Brand Logo	Part Number	Description	Other Manufacturers
	IRGP30B60KD-E	INSULATED GATE BIPOLAR TRANSISTOR	IRF

More Datasheets from International Rectifier (now Infineon)

Part Number	Description
IRGP30B120KD-EP	INSULATED GATE BIPOLAR TRANSISTOR
IRGP35B60PD-EP	SMPS IGBT
IRGP35B60PDPbF	SMPS IGBT
IRGP20B120U-EP	INSULATED GATE BIPOLAR TRANSISTOR
IRGP20B120UD-EP	insulated gate bipolar transistor
IRGP20B60PDPBF	WARP2 SERIES IGBT
IRGP4055DPBF	PDP TRENCH IGBT
IRGP4062-EPBF	INSULATED GATE BIPOLAR TRANSISTOR
IRGP4062D-EPbF	INSULATED GATE BIPOLAR TRANSISTOR
IRGP4062DPBF	INSULATED GATE BIPOLAR TRANSISTOR

IRGP30B60KD-EP Distributor