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IRGP30B60KD-EP - INSULATED GATE BIPOLAR TRANSISTOR

Key Features

  • Low VCE (on) Non Punch Through IGBT Technology. Low Diode VF. 10µs Short Circuit Capability. Square RBSOA. Ultrasoft Diode Reverse Recovery Characteristics. Positive VCE (on) Temperature Coefficient. TO-247AD Package Lead-Free C VCES = 600V IC = 30A, TC=100°C G E tsc > 10µs, TJ=150°C n-channel VCE(on) typ. = 1.95V Benefits.
  • Benchmark Efficiency for Motor Control.
  • Rugged Transient Performance.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PD - 95120A IRGP30B60KD-EP INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • • Low VCE (on) Non Punch Through IGBT Technology. Low Diode VF. 10µs Short Circuit Capability. Square RBSOA. Ultrasoft Diode Reverse Recovery Characteristics. Positive VCE (on) Temperature Coefficient. TO-247AD Package Lead-Free C VCES = 600V IC = 30A, TC=100°C G E tsc > 10µs, TJ=150°C n-channel VCE(on) typ. = 1.95V Benefits • Benchmark Efficiency for Motor Control. • Rugged Transient Performance. • Low EMI. • Excellent Current Sharing in Parallel Operation.