FEATURES
KEY PARAMETERS
l Advanced Trench IGBT Technology VCE min 300 V l Optimized for Sustain and Energy Recovery VCE(ON) typ. @ IC = 70A 1.90 V Circuits in PDP APPLICATIONS
l Low VCE(on) and Energy per Pulse (EPULSETM) for Improved Panel Efficiency IRP max @ TC= 25°C c TJ max 250 150 A °C l High Repetitive Peak Current Capability l Lead Free Package C C G E n-channel E C G TO-247AC G G a te C C o lle c to r E Em itter DESCRIPTION
Additional features are 150°C operating junction temperature and high repetitive peak current capability. These features combine to make this IGBT a highly efficient, robust and reliable device for PDP applications. ABSOLUTE MAXIMUM RATINGS
Parameter VGE IC @ TC = 25°C IC @ TC = 100°C IRP @ TC = 25°C PD @TC = 25°C PD @TC = 100°C Gate-to-Emitter Voltage Continuous Collector Current, VGE @ 15V Continuous Collector, VGE @ 15V Repetitive Peak Current c Power Dissipation Power Dissipation Linear Derating Factor TJ TSTG Operating Junction and Storage Temperature...
International Rectifier
