IRGPC30U Datasheet | IRF

Previous Datasheet Index Next Data Sheet - 9.1032 INSULATED GATE BIPOLAR TRANSISTOR Features - Switching-loss rating includes all "tail" losses - Optimized for high operating frequency (over 5kHz) See Fig. 1 for Current vs. Frequency curve UltraFast IGBT VCES = 600V VCE(sat) ≤ 3.0V @VGE = 15V, I C = 12A n-channel Description Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than parable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of high-voltage, highcurrent applications. TO-247AC Absolute...