IRGPC30F
IRGPC30F is INSULATED GATE BIPOLAR TRANSISTOR manufactured by IRF.
- 9.1023
INSULATED GATE BIPOLAR TRANSISTOR
Features
- Switching-loss rating includes all "tail" losses
- Optimized for medium operating frequency (1 to 10kHz) See Fig. 1 for Current vs. Frequency curve
Fast Speed IGBT
VCES = 600V VCE(sat) ≤ 2.1V
@VGE = 15V, IC = 17A n-channel
Description
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than parable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of high-voltage, highcurrent applications.
TO -2 4 7...
