IRGPC30S
IRGPC30S is INSULATED GATE BIPOLAR TRANSISTOR manufactured by IRF.
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INSULATED GATE BIPOLAR TRANSISTOR
Features
- Switching-loss rating includes all "tail" losses
- Optimized for line frequency operation (to 400Hz) See Fig. 1 for Current vs. Frequency curve
Standard Speed IGBT
VCES = 600V VCE(sat) ≤ 2.2V
@VGE = 15V, IC = 18A n-channel
Description
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than parable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of high-voltage, highcurrent applications.
TO-247AC
Absolute...
