Part IRGPS60B120KD
Description INSULATED GATE BIPOLAR TRANSISTOR
Category Transistor
Manufacturer IRF
Size 135.94 KB
IRF
IRGPS60B120KD

Overview

  • Low VCE (on) Non Punch Through IGBT Technology.
  • Low Diode VF.
  • 10µs Short Circuit Capability.
  • Square RBSOA.
  • Ultrasoft Diode Reverse Recovery Characteristics.
  • Positive VCE (on) Temperature Coefficient.
  • Super-247 Package. VCES = 1200V VCE(on) typ. = 2.50V G E @ VGE = 15V, N-channel Benefits
  • Benchmark Efficiency for Motor Control.
  • Rugged Transient Performance.
  • Low EMI.