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IRGPS60B120KDP - Insulated Gate Bipolar Transistor

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International Rectifier

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IRGPS60B120KDP Insulated Gate Bipolar Transistor by International Rectifier - Datasheet Preview — Datasheet preview – IRGPS60B120KDP

Datasheet Details

Part number	IRGPS60B120KDP
Manufacturer	International Rectifier
File Size	132.19 KB
Description	Insulated Gate Bipolar Transistor
Datasheet	IRGPS60B120KDP Datasheet
Additional preview pages of the IRGPS60B120KDP datasheet.

Product details

Features

Low VCE (on) Non Punch Through IGBT Technology.
Low Diode VF.
10µs Short Circuit Capability.
Square RBSOA.
Ultrasoft Diode Reverse Recovery Characteristics.
Positive VCE (on) Temperature Coefficient.
Super-247 Package.
Lead-Free C G E N-channel VCES = 1200V VCE(on) typ. = 2.50V @ VGE = 15V, ICE = 60A, Tj=25°C Benefits.
Benchmark Efficiency for Motor Control.
Rugged Transient Performance.

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Published: Feb 16, 2016 |