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PD- 95913
IRGPS60B120KDP
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Motor Control Co-Pack IGBT
Features
• Low VCE (on) Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics. • Positive VCE (on) Temperature Coefficient. • Super-247 Package. • Lead-Free
C
G E
N-channel
VCES = 1200V VCE(on) typ. = 2.50V
@ VGE = 15V, ICE = 60A, Tj=25°C
Benefits
• Benchmark Efficiency for Motor Control. • Rugged Transient Performance. • Low EMI. • Significantly Less Snubber Required • Excellent Current Sharing in Parallel Operation.
IRGPS60B120KDP Datasheet
