Part IRGPS60B120KDP
Description Insulated Gate Bipolar Transistor
Category Transistor
Manufacturer International Rectifier
Size 132.19 KB
International Rectifier
IRGPS60B120KDP

Overview

  • Low VCE (on) Non Punch Through IGBT Technology.
  • Low Diode VF.
  • 10µs Short Circuit Capability.
  • Square RBSOA.
  • Ultrasoft Diode Reverse Recovery Characteristics.
  • Positive VCE (on) Temperature Coefficient.
  • Super-247 Package.
  • Lead-Free C G E N-channel VCES = 1200V VCE(on) typ. = 2.50V @ VGE = 15V, ICE = 60A, Tj=25°C Benefits
  • Benchmark Efficiency for Motor Control.
  • Rugged Transient Performance.