International Rectifier IRGS6B60KDPBF
Insulated Gate Bipolar Transistor
| Part No. | IRGS6B60KDPBF |
|---|---|
| Datasheet | IRGS6B60KDPBF Download |
| Manufacturer |  International Rectifier |
| Description | Insulated Gate Bipolar Transistor |
| Buy | Stock & Price |
FEATURES
● Low VCE (on) Non Punch Through IGBT Technology.● Low Diode VF.
● 10μs Short Circuit Capability.
● Square RBSOA.
● Ultrasoft Diode Reverse Recovery Characteristics.
● Positive VCE (on) Temperature Coefficient.
● Lead-Free G E n-channel IRGB6B60KDPbF IRGS6B60KDPbF IRGSL6B60KDPbF VCES = 600V IC = 10A, TC=100°C tsc > 10μs, TJ=150°C VCE(on) typ. = 1.8V Benefits
● Benchmark Efficiency for Motor Control.
● Rugged Transient Performance.
● Low EMI.
● Excellent Current Sharing in Parallel Operation.
ABSOLUTE MAXIMUM RATINGS
Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 25°C IF @ TC = 100°C IFM VGE PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Diode Continuous Forward Current Diode Continuous Forward Current Diode Maximum Forward Current Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec.
