IRHM2C50SE Datasheet | IRF

feature all of the well-established advantages of MOSFETs, such as voltage control, very fast switching, ease of paralleling and temperature stability of the electrical parameters. They are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high-energy pulse circuits in space and weapons environments. Product Summary Part Number IRHM2C50SE IRHM7C50SE BV DSS 600V RDS(on) 0.60 Ω ID 10.4A Features : n n n n n n n n n n n n n Radiation Hardened up to 1 x 10 5 Rads (Si) Single Event Burnout (SEB) Hardened Single Event Gate Rupture (SEGR) Hardened Gamma Dot (Flash X-Ray) Hardened Neutron Tolerant Identical Pre- and Post-Electrical Test Conditions Repetitive Avalanche Rating Dynamic dv/dt Rating Simple Drive Requirements Ease of Paralleling Hermetically Sealed Electrically Isolated Ceramic Eyelets Absolute Maximum Ratings Parameter I D @ VGS = 12V, TC = 25°C Continuous Drain Current ID @ VGS = 12V, TC = 100°C Continuous Drain Current IDM Pulsed Drain Current  PD @ TC = 25°C Max. Power Dissipation Linear Derating Factor VGS Gate-to-Source Voltage EAS Single Pulse Avalanche Energy ‚ I AR Avalanche Current  EAR Repetitive Avalanche Energy  dv/dt Peak Diode Recovery dv/dt - TJ TSTG Operating Junction Storage Temperature Range Lead Temperature Weight 10.4 6.5 41.6 150 1.2 ±20 500 10.4 15 3.0 -55 to 150 Pre-Radiation IRHM2C50SE, IRHM7C50SE Units A W W/K … V m J A m J V/ns o C 300 (0.063 in (1.6 mm) from case for 10 sec) 9.3 (typical) g To Order Previous Datasheet IRHM2C50SE, IRHM7C50SE Devices Index Next Data Sheet Pre-Radiation Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) Parameter BVDSS ∆BVDSS/∆TJ RDS(on) VGS(th) gfs IDSS Drain-to-Source Breakdown Voltage Temperature Coefficient of Breakdown Voltage Static Drain-to-Source On-State Resistance Gate Threshold Voltage Forward Transconductance Zero Gate Voltage Drain Current Min - - - 2.5 3.0 - - - - - - - - - - - - - Typ...