Overview: www.DataSheet4U.com PD - 91862D RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-254AA)
Product Summary
Part Number Radiation Level IRHM57260 100K Rads (Si) IRHM53260 IRHM54260 IRHM58260 300K Rads (Si) 600K Rads (Si) 1000K Rads (Si) RDS(on) 0.049Ω 0.049Ω 0.049Ω 0.050Ω ID 35A* 35A* 35A* 35A* IRHM57260 200V, N-CHANNEL 4 # TECHNOLOGY c TO-254AA International Rectifier’s R5 TM technology provides high performance power MOSFETs for space applications. These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters.
