IRL530N Datasheet Hexfet Power MOSFET

Manufacturer: IRF

Overview: PD - 91348C IRL530N l l l l l l Logic-Level Gate Drive Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated HEXFET® Power MOSFET D VDSS = 100V RDS(on) = 0.

Datasheet Details

Part number	IRL530N
Manufacturer	IRF
File Size	193.79 KB
Description	HEXFET Power MOSFET
Datasheet	IRL530N_IRF.pdf

General Description

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts.

Key Features

14.09 (.555) 13.47 (.530) 2 - DRAIN 1- GATE 3 - SOURCE 2- DRAIN 3- SOURCE 4 - DRAIN 4- DRAIN 4.06 (.160) 3.55 (.140) 3X 1.40 (.055) 3X 1.15 (.045) 2.54 (.100) 0.93 (.037) 0.69 (.027) M B A M 3X 0.55 (.022) 0.46 (.018) 0.36 (.014) 2.92 (.115) 2.64 (.104) 2X NOTES: 1.

IRL530N Distributor

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