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IRL530N - N-Channel MOSFET

Datasheet Summary

Features

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  • Static drain-source on-resistance: RDS(on) ≤0.1Ω.
  • Enhancement mode.
  • Fast Switching Speed.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Datasheet preview – IRL530N

Datasheet Details

Part number IRL530N
Manufacturer INCHANGE
File Size 240.38 KB
Description N-Channel MOSFET
Datasheet download datasheet IRL530N Datasheet
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Full PDF Text Transcription

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isc N-Channel MOSFET Transistor IRL530N，IIRL530N ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.1Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Reliable device for use in a wide variety of applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 100 VGS Gate-Source Voltage ±16 ID Drain Current-Continuous 17 IDM Drain Current-Single Pulsed 60 PD Total Dissipation @TC=25℃ 79 Tj Max.
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