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IRL530NS - HEXFET Power MOSFET

Description

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

Features

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Datasheet preview – IRL530NS

Datasheet Details

Part number IRL530NS
Manufacturer IRF
File Size 281.16 KB
Description HEXFET Power MOSFET
Datasheet download datasheet IRL530NS Datasheet
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Full PDF Text Transcription

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PD - 91349C IRL530NS/L HEXFET® Power MOSFET Advanced Process Technology l Surface Mount (IRL530NS) l Low-profile through-hole (IRL530NL) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description l D VDSS =100V G11 S RDS(on) = 0.10Ω ID = 17A Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4.
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