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IRLMS6702PBF Datasheet Power MOSFET

Manufacturer: IRF

General Description

Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The Micro6™ package with its customized leadframe produces a HEXFET® power MOSFET with RDS(on) 60% less than a similar size SOT-23.

Overview

PD - 95224 IRLMS6702PbF HEXFET® Power MOSFET l l l l l Generation V Technology Micro6 Package Style Ultra Low RDS(on) P-Channel MOSFET Lead-Free D 1 6 A D VDSS = -20V RDS(on) = 0.