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PD - 91414C
IRLMS6702
HEXFET® Power MOSFET
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Generation V Technology Micro6 Package Style Ultra Low RDS(on) P-Channel MOSFET
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VDSS = -20V RDS(on) = 0.20Ω
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Description
Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The Micro6 package with its customized leadframe produces a HEXFET® power MOSFET with RDS(on) 60% less than a similar size SOT-23.
IRLMS6702 Datasheet
