Datasheet Summary
PD-91299E
RADIATION HARDENED POWER MOSFET THRU-HOLE (T0-254AA)
Product Summary
Part Number IRHM9250 IRHM93250 Radiation Level 100K Rads (Si) 300K Rads (Si) RDS(on) 0.315Ω 0.315Ω
IRHM9250 JANSR2N7423 200V, P-CHANNEL REF: MIL-PRF-19500/662
RAD-Hard HEXFET TECHNOLOGY
™ ®
ID QPL Part Number -14A JANSR2N7423 -14A JANSF2N7423
International Rectifier’s RAD-Hard HEXFET ® technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices have been characterized for both Total Dose and Single Event Effects (SEE). The bination of low Rds(on) and low gate charge reduces the...