JANSR2N7425 Datasheet | International Rectifier

Description IRHM9160 is part of the International Rectifier Hi Rel family of products. IR Hi Rel RAD-Hard HEXFET technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices have been characterized for both Total Dose and Single Event Effects (SEE). The bination of low Rdson and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters. TO-254AA Features - Single Event Effect (SEE) Hardened - Identical Pre- and Post-Electrical Test Conditions - Low RDS(on) - Repetitive Avalanche Ratings - Dynamic dv/dt Ratings - Simple Drive Requirements - Ease of Paralleling - Hermetically Sealed - Electrically Isolated - Ceramic Package - Light Weight - ESD Rating: Class 3A per MIL-STD-750, Method 1020 Absolute Maximum Ratings Parameter ID @ VGS = -12V, TC = 25°C Continuous Drain Current ID @ VGS = -12V, TC = 100°C Continuous Drain Current Pulsed Drain Current  PD @TC = 25°C Maximum Power Dissipation Linear Derating Factor VGS EAS IAR EAR dv/dt Gate-to-Source Voltage Single Pulse Avalanche Energy  Avalanche Current  Repetitive Avalanche Energy  Peak Diode Recovery dv/dt  TJ TSTG Operating Junction and Storage Temperature Range Lead Temperature Weight Pre-Irradiation Units -35- -24 -140 W/°C ± 20 500 -35 25 -16 -55 to + 150 V m J A m J...