JANSR2N7475T1 Datasheet | International Rectifier

PD-95840A IRHMS57163SE RADIATION HARDENED POWER MOSFET 130V, N-CHANNEL THRU-HOLE (Low-Ohmic TO-254AA) REF: MIL-PRF-19500/685 5 TECHNOLOGY ™ Product Summary Part Number Radiation Level RDS(on) ID QPL Part Number IRHMS57163SE 100K Rads (Si) 0.0155Ω 45A- JANSR2N7475T1 Low-Ohmic TO-254AA International Rectifier’s R5TM technology provides high performance power MOSFETs for space applications. These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)). The bination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control....