JANSR2N7432 Datasheet | International Rectifier

Features - Single event effect (SEE) hardened - Low RDS(on) - Low total gate charge - Simple drive requirements - Hermetically sealed - Electrically isolated - Ceramic eyelets - ESD rating: Class 3B per MIL-STD-750, Method 1020 Product Summary - BVDSS: 100V - ID : 35A - RDS(on),max : 45m (100 krad(Si)) - QG,max : 310n C - REF: MIL-PRF-19500/663 Potential Applications - DC-DC converter - Motor drives TO-254AA Product Validation Qualified to JANS screening flow according to MIL-PRF-19500 for space applications Description IR Hi Rel rad hard HEXFET technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices have been characterized for both Total Dose and Single Event Effects (SEE). The bination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well-established advantages of MOSFETs such as voltage control, fast switching and temperature stability of electrical parameters. Ordering Information Table 1 Ordering options Part number Package IRHM7160 TO-254AA TO-254AA IRHM3160 TO-254AA JANSF2N7432 TO-254AA IRHM4160 TO-254AA JANSG2N7432 TO-254AA Screening Level COTS JANS COTS JANS COTS...