Datasheet Details
| Part number | JANSR2N7432 |
|---|---|
| Manufacturer | International Rectifier (now Infineon) |
| File Size | 1.35 MB |
| Description | Radiation Hardened Power MOSFET |
| Datasheet |
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IR HiRel rad hard HEXFET technology provides high performance power MOSFETs for space applications.
This technology has over a decade of proven performance and reliability in satellite applications.
These devices have been characterized for both Total Dose and Single Event Effects (SEE).
| Part number | JANSR2N7432 |
|---|---|
| Manufacturer | International Rectifier (now Infineon) |
| File Size | 1.35 MB |
| Description | Radiation Hardened Power MOSFET |
| Datasheet |
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| Part Number | Description | Manufacturer |
|---|---|---|
| JANSR2N7438 | Formerly Available As FSL913A0R4/ Radiation Hardened/ SEGR Resistant/ P-Channel Power MOSFETs | Intersil Corporation |
| JANSR2N7439 | Formerly Available As FSL923A0R4/ Radiation Hardened/ SEGR Resistant/ P-Channel Power MOSFETs | Intersil Corporation |
| JANSR2N7400 | 8A/ 200V/ 0.440 Ohm/ Rad Hard/ N-Channel Power MOSFET | Intersil Corporation |
| JANSR2N7401 | 6A/ 250V/ 0.600 Ohm/ Rad Hard/ N-Channel Power MOSFET | Intersil Corporation |
| JANSR2N7402 | 3A/ 500V/ 2.70 Ohm/ Rad Hard/ N-Channel Power MOSFET | Intersil Corporation |
| Part Number | Description |
|---|---|
| JANSR2N7425 | POWER MOSFET |
| JANSR2N7470T1 | RADIATION HARDENED POWER MOSFET |
| JANSR2N7471T1 | RADIATION HARDENED POWER MOSFET |
| JANSR2N7475T1 | RADIATION HARDENED POWER MOSFET |
| JANSR2N7476T1 | RADIATION HARDENED POWER MOSFET |
The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.