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JANSR2N7476T1 - RADIATION HARDENED POWER MOSFET

Key Features

  • n Low RDS(on) n Fast Switching n Single Event Effect (SEE) Hardened n Low Total Gate Charge n Simple Drive Requirements n Ease of Paralleling n Hermetically Sealed n Ceramic Eyelets n Electrically Isolated n Light Weight Absolute Maximum Ratings Pre-Irradiation Parameter ID @ VGS = 12V, TC = 25°C Continuous Drain Current ID @ VGS = 12V, TC = 100°C Continuous Drain Current IDM Pulsed Drain Current À PD @ TC = 25°C Max. Power Dissipation Linear Derating Factor Units 45 29 A 180 208 W.

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📁 Similar Datasheet

Part Number Description Manufacturer
JANSR2N7400 8A/ 200V/ 0.440 Ohm/ Rad Hard/ N-Channel Power MOSFET Intersil Corporation
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Other Datasheets by International Rectifier (now Infineon)

Part Number Description
JANSR2N7470T1 RADIATION HARDENED POWER MOSFET
JANSR2N7471T1 RADIATION HARDENED POWER MOSFET
JANSR2N7475T1 RADIATION HARDENED POWER MOSFET
JANSR2N7477T1 RADIATION HARDENED POWER MOSFET
JANSR2N7478T1 RADIATION HARDENED POWER MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PD - 94765 IRHMS57260SE RADIATION HARDENED JANSR2N7476T1 POWER MOSFET 200V, N-CHANNEL THRU-HOLE (Low-Ohmic TO-254AA) Product Summary REF: MIL-PRF-19500/685 5 TECHNOLOGY ™ Part Number Radiation Level RDS(on) ID QPL Part Number IRHMS57260SE 100K Rads (Si) 0.044Ω 45A JANSR2N7476T1 International Rectifier’s R5TM technology provides high performance power MOSFETs for space applications. These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control.