International Rectifier SI3443DV
This benefit provides the designer with an extremely efficient device for use in battery and load management applications. This package is ideal for applications where printed circuit board space is at a premium.| Part No. | SI3443DV |
|---|---|
| Datasheet | SI3443DV Download |
| Manufacturer |  International Rectifier |
| Description | Power MOSFET |
| Buy | Stock & Price |
DESCRIPTION
These P-channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. Top View The TSOP-6 package with its customized leadframe produces a HEXFET® power MOSFET with RDS(on) 60% less than a similar size SOT-23. It's unique thermal design and RDS(on) reduction enables a current-handling increase of nearly 300% compared to the SOT-23. TSOP-6ABSOLUTE MAXIMUM RATINGS
VDS ID @ TA = 25°C ID @ TA= 70°C IDM PD @TA = 25°C PD @TA = 70°C EAS VGS TJ, TSTG Parameter Drain- Source Voltag
