GENERAL DESCRIPTION
APPLICATIONS
Load switch Battery protection Power management FEATURES
-4 A, -20 V. RDS(ON) = 0.065 Ω @ VGS = -4.5 V RDS(ON) = 0.100 Ω @ VGS = -2.5 V Fast switching speed. Low gate charge (7.2nC typical). High performance trench technology for extremely low RDS(ON). SuperSOTTM-6 package: small footprint (72% smaller than standard SO-8); low profile (1mm thick). S D 1 D 2 G D SuperSOT TM-6 D 3 ABSOLUTE MAXIMUM RATINGS
TA = 25°C unless otherwise noted Symbol Parameter VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous Drain Current - Pulsed Power Dissipation for Single Operation (Note 1) (Note 1a) (Note 1a) (Note 1b) TJ, Tstg Operating and Storage Junction Temperature Range 6 5 4 Ratings -20 ±8 -4 -20 1.6 0.8 -55 to +150 Units V V A W °C Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient RθJC Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) Package Outlines and Ordering Information Device Marking Device Reel Size .443 Si3443DV 7’’ 78 30 Tape Width 8mm °C/W °C/W Quantity 3000 units 2001 Semiconductor Components Industries, LLC.
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