H11G1X Datasheet | ISOCOM COMPONENTS

DESCRIPTION 3.0 The H11G_ series are optically coupled isolators consisting of an infrared light emitting diode and 0.5 a high voltage NPN silicon photo darlington 3.0 which has an integral base-emitter resistor to 0.26 3.35 0.5 optimise switching speed and elevated temperature characteristics in a standard 6pin ABSOLUTE MAXIMUM RATINGS dual in line plastic package. (25°C unless otherwise specified) 13° Max FEATURES Options :10mm lead spread - add G after part no. Surface mount - add SM after part no. Tape&reel - add SMT&R after part no. l High Isolation Voltage (5.3k VRMS ,7.5k VPK ) l High Current Transfer Ratio ( 1000% min) l High BVCEO (H11G1 - 100V min.) l Low collector dark current :100n A max. at 80V VCE l Low input current 1m A IF l Storage Temperature -55°C to + 150°C Operating Temperature -55°C to + 100°C Lead Soldering Temperature (1/16 inch (1.6mm) from case for 10 secs) 260°C INPUT DIODE Forward Current Peak Forward Current (1µs pulse, 300pps) Reverse Voltage Power Dissipation OUTPUT TRANSISTOR Collector-emitter Voltage BVCEO H11G3, H11G2, H11G1 Collector-base Voltage BVCBO H11G3, H11G2, H11G1 Emitter-base Voltage BVECO Power Dissipation POWER DISSIPATION 55, 80, 100V 55, 80, 100V 6V 200m W 60m A 3A 3V 100m W APPLICATIONS l Modems l Copiers, facsimiles l Numerical control machines l Signal transmission between systems of different potentials and impedances OPTION SM SURFACE MOUNT OPTION G 0.6 0.1 10.46 9.86 1.25 0.75 Total Power Dissipation 260m W ISO PONENTS LTD Unit 25B, Park View Road West, Park View Industrial Estate, Brenda Road Hartlepool, TS25 1YD England Tel: (01429)863609 Fax : (01429) 863581 e-mail sales@iso.co.uk http://.iso. 7/12/00 DB92008m-AAS/a1 ELECTRICAL CHARACTERISTICS ( TA= 25°C Unless otherwise noted ) PARAMETER Input Forward Voltage (VF) Reverse Voltage (VR) Reverse Current (IR) Collector-emitter Breakdown (BVCEO ) H11G1 H11G2 H11G3 Collector-base Breakdown (BVCBO ) H11G1 H11G2 H11G3 Emitter-base Breakdown...