H11G1 Datasheet | Motorola Semiconductor

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by H11G1/D - Global Optoisolator™ [CTR = 1000% Min] 6-Pin DIP Optoisolators Darlington Output (On-Chip Resistors) The H11G1, H11G2 and H11G3 devices consist of gallium arsenide IREDs optically coupled to silicon photodarlington detectors which have integral base- emitter resistors. The on- chip resistors improve higher temperature leakage characteristics. Designed with high isolation, high CTR, high voltage and low leakage, they provide excellent performance. - High CTR, H11G1 & H11G2 - 1000% (@ IF = 10 m A), 500% (@ IF = 1 m A) - High V(BR)CEO, H11G1 - 100 Volts, H11G2 - 80 Volts - To order devices that are tested and marked per VDE 0884 requirements, the suffix ”V” must be included at end of part number. VDE 0884 is a test option. Applications - Interfacing and coupling systems of different potentials and impedances - Phase and Feedback Controls - General Purpose Switching Circuits - Solid State Relays MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Rating INPUT LED Reverse Voltage Forward Current - Continuous Forward Current - Peak Pulse Width = 300 µs, 2% Duty Cycle LED Power Dissipation @ TA = 25°C Derate above 25°C OUTPUT DETECTOR Collector- Emitter Voltage H11G1 H11G2 H11G3 VCEO 100 80 55 7 150 150 1.76 Volts VR IF IF PD 6 60 3 120 1.41 Volts m A Amps m W m W/°C 3 2 Symbol Value Unit 1 H11G2- [CTR = 1000% Min] H11G3 [CTR = 200% Min] - Motorola Preferred Devices STYLE 1 PLASTIC STANDARD THRU HOLE CASE 730A- 04 SCHEMATIC 5 4 PIN 1. 2. 3. 4. 5. 6. ANODE CATHODE N.C. EMITTER COLLECTOR BASE Emitter- Base Voltage Collector Current - Continuous Detector Power Dissipation @ TA = 25°C Derate above 25°C TOTAL DEVICE Total Device Power Dissipation @ TA = 25°C Derate above 25°C Operating Junction Temperature Range(2) Storage Temperature Range(2) Soldering Temperature (10 s) Isolation Surge Voltage(1) (Peak ac Voltage, 60 Hz, 1 sec Duration) VEBO IC PD Volts m A m W m W/°C PD TA Tstg TL...