Fairchild Semiconductor H11G3
The H11GX series are photodarlington-type optically coupled optocouplers. These devices have a gallium arsenide infrared emitting diode coupled with a silicon darlington connected phototransistor which has an integral base-emitter resistor to optimize elevated temperature characteristics.| Part No. | H11G3 |
|---|---|
| Datasheet | H11G3 Download |
| Manufacturer |  Fairchild Semiconductor |
| Description | HIGH VOLTAGE PHOTODARLINGTON OPTOCOUPLERS |
| Buy | Stock & Price |
DESCRIPTION
H11G1 H11G2 H11G3FEATURES
● High BVCEO - Minimum 100 V for H11G1 - Minimum 80 V for H11G2 - Minimum 55 V for H11G3● High sensitivity to low input current Minimum 500 percent CTR at IF = 1 mA
● Low leakage current at elevated temperature (maximum 100 µA at 80°C)
● Underwriters Laboratory (UL) recognized File# E90700
APPLICATIONS
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● CMOS logic interface Telephone ring detector Low input TTL interface Power supply isolation Replace pulse transformer ANODE 1 6 BASE CATHODE 2 5 COLLECTOR N/C 3 4 EMITTER NOTE All dimensions are in inches (millimeters)
ABSOLUTE MAXIMUM RATINGS
Parameter TOTAL DEVICE Storage Temperature Operating Temperature Lead Solder Temperature Total Device Power Dissipation @ TA = 25°C Derate above 25°C Input-Output Isolation Voltage EMITTER Forward Input Current Reverse Input Voltage Forward Current - Peak (1µs pulse, 300pps) LED Power Dissipation @ TA = 25°C Derate above 25°C DETECTOR Collector-Emitter Voltage H11G1 H11G2 H11G3 Detector Power Dissip...
