H11G3 Description
The H11GX series are photodarlington-type optically coupled optocouplers. These devices have a gallium arsenide infrared emitting diode coupled with a silicon darlington connected phototransistor which has an integral base-emitter resistor to optimize elevated temperature characteristics.
H11G3 Key Features
- High BVCEO
- Minimum 100 V for H11G1
- Minimum 80 V for H11G2
- Minimum 55 V for H11G3
- High sensitivity to low input current Minimum 500 percent CTR at IF = 1 mA
- Low leakage current at elevated temperature (maximum 100 µA at 80°C)
- Underwriters Laboratory (UL) recognized File# E90700