H11G3X Description
3.0 The H11G_ series are optically coupled isolators consisting of an infrared light emitting diode and 0.5 a high voltage NPN silicon photo darlington 3.0 which has an integral base-emitter resistor to 0.26 3.35 0.5 optimise switching speed and elevated temperature characteristics in a standard 6pin RATINGS dual in line plastic package. (25°C unless otherwise specified) 13° Max.
H11G3X Key Features
- add G after part no. Surface mount
- add SM after part no. Tape&reel
- add SMT&R after part no. l High Isolation Voltage (5.3kVRMS ,7.5kVPK ) l High Current Transfer Ratio ( 1000% min) l High
- 100V min.) l Low collector dark current :100nA max. at 80V VCE l Low input current 1mA IF