H11G3 Datasheet
H11G3 Datasheet (Fairchild Semiconductor)
Fairchild Semiconductor
The H11GX series are photodarlington-type optically coupled optocouplers. These devices have a gallium arsenide infrared emitting diode coupled with a silicon darlington connected phototransistor whic.
* High BVCEO - Minimum 100 V for H11G1 - Minimum 80 V for H11G2 - Minimum 55 V for H11G3
* High sensitivity to low input current Minimum 500 percent CTR at IF = 1 mA
* Low leakage current at elevated temperature (maximum 100 µA at 80°C)
* Underwriters Laboratory (UL) recognized File# E90700
APPLICA.
H11G3 Datasheet (Motorola Semiconductor)
Motorola Semiconductor
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by H11G1/D H11G1 * GlobalOptoisolator™ [CTR = 1000% Min] 6-Pin DIP Optoisolators Darlington Output (On-Chip Resistors) The H11G1, H11G2 an.
= 25°C unless otherwise noted)
Rating INPUT LED Reverse Voltage Forward Current
* Continuous Forward Current
* Peak Pulse Width = 300 µs, 2% Duty Cycle LED Power Dissipation @ TA = 25°C Derate above 25°C OUTPUT DETECTOR Collector
*Emitter Voltage H11G1 H11G2 H11G3 VCEO 100 80 55 7 150 150 1.76 Volts.
H11G3 Datasheet (ISOCOM COMPONENTS)
ISOCOM COMPONENTS
3.0 The H11G_ series are optically coupled isolators consisting of an infrared light emitting diode and 0.5 a high voltage NPN silicon photo darlington 3.0 which has an integral base-emitter resistor .
Options :10mm lead spread - add G after part no. Surface mount - add SM after part no. Tape&reel - add SMT&R after part no. l High Isolation Voltage (5.3kVRMS ,7.5kVPK ) l High Current Transfer Ratio ( 1000% min) l High BVCEO (H11G1 - 100V min.) l Low collector dark current :100nA max. at 80V VCE l .