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IS32WV204816B - 2M x 16 (32-Mbit) PSEUDO STATIC RAM

General Description

The ISSI IS32WV204816B is a high-performance CMOS Pseudo Static RAM, organized as 2Meg x 16 bits.

Key Features

  • Access time: 70ns.
  • TTL compatible inputs and outputs; tri-state I/O.
  • Wide Power supply voltage: 2.2V to 3.6V.
  • CMOS Standby: 70µA (32-Mbit).
  • Deep Power Down Standby: 5µA (32-Mbit).
  • Deep Power-Down Mode: Data Invalid.
  • Page Operation Mode: Four Word Access.
  • Logic compatible with SRAM R/W (WE) pin.
  • Industrial Temperature Range: -40oC to 85oC.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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IS32WV204816B 2M x 16 (32-Mbit) PSEUDO STATIC RAM ISSI MAY 2004 ® FEATURES • Access time: 70ns • TTL compatible inputs and outputs; tri-state I/O • Wide Power supply voltage: 2.2V to 3.6V • CMOS Standby: 70µA (32-Mbit) • Deep Power Down Standby: 5µA (32-Mbit) • Deep Power-Down Mode: Data Invalid • Page Operation Mode: Four Word Access • Logic compatible with SRAM R/W (WE) pin. • Industrial Temperature Range: -40oC to 85oC DESCRIPTION The ISSI IS32WV204816B is a high-performance CMOS Pseudo Static RAM, organized as 2Meg x 16 bits. ISSI CMOS technology provides high density, high speed low power devices that features SRAM-like write timing. Data is written to memory cells on the rising edge of the WE signal. With a page size of 4 words, the device has a page access operation.