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IS34MW02G164 - 2Gb(x8/x16) 1.8V NAND FLASH MEMORY

Download the IS34MW02G164 datasheet PDF. This datasheet also covers the IS34MW02G084 variant, as both devices belong to the same 2gb(x8/x16) 1.8v nand flash memory family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Flexible & Efficient Memory Architecture - Memory Cell: 1bit/Memory Cell - Organization: 256Mb x8 /128Mb x16 - X8: - Memory Cell Array: (256M + 8M) x 8bit - Data Register: (2K + 64) x 8bit - Page Size: (2K + 64) Byte - Block Erase: (128K + 4K) Byte - X16: - - Memory Cell Array: (128M + 4M) x 16bit - - Data Register: (1K + 32) x 16bit - - Page Size: (1K + 32) Byte - - Block Erase: (64K + 2K) Byte.
  • Highest performance - Read Performance - Random Read: 25us (Max. ) - Serial Access: 45ns (.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IS34MW02G084-ISSI.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by ISSI (now Infineon)

Part Number Description
IS34MW02G084 2Gb(x8/x16) 1.8V NAND FLASH MEMORY
IS34MW01G084 1Gb (x8/x16) 1.8V NAND FLASH MEMORY
IS34MW01G164 1Gb (x8/x16) 1.8V NAND FLASH MEMORY
IS34MW04G084 4Gb(x8/x16) 1.8V NAND FLASH MEMORY
IS34MW04G088 4Gb SLC-8b ECC 1.8V X8/X16 NAND FLASH MEMORY

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
IS34MW02G084/164 IS35MW02G084/164 2Gb SLC-4b ECC 1.8V X8/X16 NAND FLASH MEMORY STANDARD NAND INTERFACE IS34/35MW02G084/164 2Gb(x8/x16) 1.8V NAND FLASH MEMORY with 4b ECC FEATURES  Flexible & Efficient Memory Architecture - Memory Cell: 1bit/Memory Cell - Organization: 256Mb x8 /128Mb x16 - X8: - Memory Cell Array: (256M + 8M) x 8bit - Data Register: (2K + 64) x 8bit - Page Size: (2K + 64) Byte - Block Erase: (128K + 4K) Byte - X16: - - Memory Cell Array: (128M + 4M) x 16bit - - Data Register: (1K + 32) x 16bit - - Page Size: (1K + 32) Byte - - Block Erase: (64K + 2K) Byte  Highest performance - Read Performance - Random Read: 25us (Max.) - Serial Access: 45ns (Max.) - Write Performance - Program time: 300us - typical - Block Erase time: 3ms – typical  Low Power with Wide Temp.