IS42RM16200D Datasheet 1m X 16bits X 2banks Low Power Synchronous Dram

Manufacturer: ISSI (now Infineon)

Overview: IS42/45SM/RM/VM16200D 1M x 16Bits x 2Banks Low Power Synchronous.

This datasheet includes multiple variants, all published together in a single manufacturer document.

Datasheet Details

Part number	IS42RM16200D
Manufacturer	ISSI (now Infineon)
File Size	517.44 KB
Description	1M x 16Bits x 2Banks Low Power Synchronous DRAM
Datasheet	IS42RM16200D IS42SM16200D Datasheet (PDF)

These IS42SM/RM/VM16200D are low power 33,554,432 bits CMOS Synchronous DRAM organized as 2 banks of 1,048,576 words x 16 bits.

These products are offering fully synchronous operation and are referenced to a positive edge of the clock.

All inputs and outputs are synchronized with the rising edge of the clock input.

JEDEC standard 3.3V, 2.5V, 1.8V power supply.
Auto refresh and self refresh.
All pins are compatible with LVCMOS interface.
4K refresh cycle / 64ms.
Programmable Burst Length and Burst Type - 1, 2, 4, 8 or Full Page for Sequential Burst - 4 or 8 for Interleave Burst.
Programmable CAS Latency : 2,3 clocks.
All inputs and outputs referenced to the positive edge of the system clock.
Data mask function by DQM.
Internal du.

Part Number	Description
IS42RM16200C	1M x 16Bits x 2Banks Low Power Synchronous DRAM
IS42RM16160E	4M x 16Bits x 4Banks Mobile Synchronous DRAM
IS42RM16400K	1M x 16Bits x 4Banks Mobile Synchronous DRAM
IS42RM16800E	128Mb Mobile Synchronous DRAM
IS42RM32100C	512K x 32Bits x 2Banks Low Power Synchronous DRAM
IS42RM32100D	512K x 32Bits x 2Banks Low Power Synchronous DRAM
IS42RM32160C	512Mb Mobile Synchronous DRAM
IS42RM32160E	4M x 32Bits x 4Banks Mobile Synchronous DRAM
IS42RM32200K	512K x 32Bits x 4Banks Mobile Synchronous DRAM
IS42RM32200M	512K x 32Bits x 4Banks Mobile Synchronous DRAM