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IS42RM16400K

Manufacturer: ISSI (now Infineon)

IS42RM16400K datasheet by ISSI (now Infineon).

This datasheet includes multiple variants, all published together in a single manufacturer document.

IS42RM16400K datasheet preview

IS42RM16400K Datasheet Details

Part number IS42RM16400K
Datasheet IS42RM16400K IS42SM Datasheet (PDF)
File Size 2.41 MB
Manufacturer ISSI (now Infineon)
Description 1M x 16Bits x 4Banks Mobile Synchronous DRAM
IS42RM16400K page 2 IS42RM16400K page 3

IS42RM16400K Overview

These IS42SM/RM/VM16400K are mobile 67,108,864 bits CMOS Synchronous DRAM organized as 4 banks of 1,048,567 words x 16 bits. These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs are synchronized with the rising edge of the clock input.

IS42RM16400K Key Features

  • JEDEC standard 3.3V, 2.5V, 1.8V power supply
  • Auto refresh and self refresh
  • All pins are patible with LVCMOS interface
  • 4K refresh cycle / 64ms
  • Programmable Burst Length and Burst Type
  • 1, 2, 4, 8 or Full Page for Sequential Burst
  • 4 or 8 for Interleave Burst
  • Programmable CAS Latency : 2,3 clocks
  • All inputs and outputs referenced to the positive edge of the system clock
  • Data mask function by DQM
ISSI (now Infineon) logo - Manufacturer

More Datasheets from ISSI (now Infineon)

View all ISSI (now Infineon) datasheets

Part Number Description
IS42RM16160E 4M x 16Bits x 4Banks Mobile Synchronous DRAM
IS42RM16200C 1M x 16Bits x 2Banks Low Power Synchronous DRAM
IS42RM16200D 1M x 16Bits x 2Banks Low Power Synchronous DRAM
IS42RM16800E 128Mb Mobile Synchronous DRAM
IS42RM32100C 512K x 32Bits x 2Banks Low Power Synchronous DRAM
IS42RM32100D 512K x 32Bits x 2Banks Low Power Synchronous DRAM
IS42RM32160C 512Mb Mobile Synchronous DRAM
IS42RM32160E 4M x 32Bits x 4Banks Mobile Synchronous DRAM
IS42RM32200K 512K x 32Bits x 4Banks Mobile Synchronous DRAM
IS42RM32200M 512K x 32Bits x 4Banks Mobile Synchronous DRAM

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